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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1485
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SK1485, N-channel vertical type MOS FET is a switching device which can be driven directly by the output of ICs having a 5 V power source. As the MOS FET has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators such as motors, relays,
0.8 MIN.
PACKAGE DRAWING (Unit : mm)
4.5 0.1 1.6 0.2
2.5 0.1 4.0 0.25
1.5 0.1
and solenoids.
1 0.42 0.06
2
3
FEATURES
* Directly driven by ICs having a 5 V power source. * Low on-state resistance RDS(on)1 = 1.2 MAX. (VGS = 4.0 V, ID = 0.5 A) RDS(on)2 = 0.8 MAX. (VGS = 10 V, ID = 0.5 A) * Complementary to 2SJ199.
0.42 0.47 0.06 1.5 0.06 3.0
0.41+0.03 -0.05
1.Source 2.Drain 3.Gate MARK : NC
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) 5 Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
100 20 1.0 2.0 2.0 150 -55 to +150
V V A A W C C
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature
Gate
Body Diode
Notes1. PW 10 ms, Duty Cycle 50% 2. Mounted on ceramic board of 16 cm2 x 0.7 mm Remark
Gate Protection Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D15680EJ3V0DS00 (3rd edition) (Previous No. TC-2349) Date Published July 2001 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
1991, 2001
2SK1485
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Ciss Coss Crss td(on) tr td(off) tf TEST CONDITIONS VDS = 100 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 0.5 A VGS = 4.0 V, ID = 0.5 A VGS = 10 V, ID = 0.5 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 25 V, ID = 0.5 A VGS = 10 V RG = 10 0.8 0.4 0.6 0.5 230 80 12 14 14 370 65 1.2 0.8 1.2 MIN. TYP. MAX. 10 10 2.0 UNIT
A A
V S pF pF pF ns ns ns ns
SWITCHING TIME
D.U.T. RL PG. RG VDD ID VGS 0 = 1 s Duty Cycle 1% ID
Wave Form
VGS VGS
Wave Form
0
10%
VGS
90%
90% 90%
ID
0 10% 10%
td(on) ton
tr td(off)
toff
tf
2
Data Sheet D15680EJ3V0DS
2SK1485
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
4
ID(pulse)
FORWARD BIAS SAFE OPERATING AREA
PW
10
10 0
dT - Derating Factor - %
100 80 60 40 20 0 0 20 40 60 80 100 120 140 TC - Case Temperature - C 160
0.01 1
=
ID - Drain Current - A
1
ID(DC)
1
m s
m s
0.3
DC
m s
0.1
VDSS
0.03
TA = 25C Single Pulse
3
10
30
100
300
1000
VDS - Drain to Source Voltage - V
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.4
PT - Total Power Dissipation - W
DRAIN CURRENT VS. DRAIN TO SOURCE VOLTAGE
V
mounted on ceramic board of 16 cm2 x 0.7 mm
ID - Drain Current - mA
600 Pulsed 500 400 300 200 100
2.0 1.6 1.2 0.8 0.4 0 0 30 60 90 120 150 180 TA - Ambient Temperature - C
3.0
2.5 V
VGS = 2.0 V
0 0
0.2 0.4 0.6 0.8 1.0 1.2 VDS - Drain to Source Voltage - V
1.4
TRANSFER CHARACTERISTICS VDS = 10 V Pulsed
| yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 8.0 3.0 VDS = 10 V f = 1MHZ
3 1
ID - Drain Current - A
1.0
0.1
0.3
0.01
0.1
0.03 0.004 0.01 0.03 0.1 0.3 1 2
0.001 0 1.0 2.0 3.0 VGS - Gate to Source Voltage - V
ID - Drain Current - A
Data Sheet D15680EJ3V0DS
3
2SK1485
RDS(on) - Drain to Source On-state Resistance -
1.1 ID = 0.5 A Pulsed 0.9
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.9 Pulsed
0.7 VGS = 4 V 0.5 VGS = 10 V
0.7
0.5
0.3
0.3
0.1 0
4
8
12
16
20
0.1 0.1
VGS - Gate to Source Voltage - V
0.3 1 ID - Drain Current - A
3
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 600 300
SWITCHING CHARACTERISTICS 800 td(off)
td(on),tr,td(off),tf - Switchig Time - ns
Ciss,Coss,Crss - Capacitance - pF
VGS = 0 V f = 1 MHZ Ciss
300 100 50 20 10 5 3 td(on) tr
VDD = 25 V VGS = 10 V RG = 10
100 50 30 10 5 3 0.2 1 3 10 30 100 200
Crss Coss
tf
0.03
0.1
0.3
1
3
10
VDS - Drain to Source Voltage - V
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source to Drain Voltage - V
VGS = 0 V Pulsed
4
ISD - Source to Drain Current - A
Data Sheet D15680EJ3V0DS
2SK1485
[MEMO]
Data Sheet D15680EJ3V0DS
5
2SK1485
[MEMO]
6
Data Sheet D15680EJ3V0DS
2SK1485
[MEMO]
Data Sheet D15680EJ3V0DS
7
2SK1485
* The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4
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